A novel data writing method in a 1T2C-type ferroelectric memory

A novel data writing method is proposed in a 1T2C-type ferroelectric memory, in which two ferroelectric capacitors with the same area are connected to the gate electrode of a MOSFET. The writing method has such an advantage that the ferroelectric capacitors are well polarized, even if the gate capacitance is relatively large. A cell structure suitable for this writing method is also proposed, which has another advantage that the cell array can easily be fabricated. SPICE simulation shows that stable operation of this cell can be expected when the device parameters are optimized.