On-Resistance–Reliability Tradeoffs in Al₂O₃/LaAlO₃/SiO₂ Gate for SiC Power MOSFETs

On-resistance–reliability tradeoffs are investigated for SiC power MOSFETs using Al2O3/LaAlO3/SiO2 gate dielectrics. Due to the high gate capacitance, the Al2O3/LaAlO3/SiO2 gate device shows an improvement on the channel resistance (
${R}_{\text {ch}}$
) versus threshold voltage shift (
${\Delta } {V}_{\text {th}}$
) tradeoff compared to the SiO2 gate counterpart. Besides, the short-circuit withstand time of the Al2O3/LaAlO3/SiO2 gate device is 1.55 times longer than that of the SiO2 gate device, while the two devices have the same on-resistance. Furthermore, the predicted lifetime of the Al2O3/LaAlO3/SiO2 gate device is ten years at an effective electric field (
${E}_{\text {eff}}$
) of 4.8 MV/cm, which is comparable with the latest reported result of the SiO2 gate counterpart.