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FinFET scaling to 10 nm gate length
By Bin Yu; Leland Chang; Ahmed, S.; Haihong Wang; Bell, S.; Chih-Yuh Yang; Tabery, C.; Chau Ho; Qi Xiang; Tsu-Jae King; Bokor, J.; Chenming Hu; Ming-Ren Lin; Kyser, D.
This paper appears in: Electron Devices Meeting, 2002. IEDM '02. Digest. International
Page(s): 251 - 254
2002
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Price: $29

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