Technology development on P-type silicon strip detectors for proton beam dosimetry

In this paper, we present a technology for the fabrication of n-in-p silicon strip detectors, which is based on the use of Al
₂
O
₃
oxide compared to p-spray insulation scheme. This technology has been developed using the best technological parameters deduced from simulations, particularly for the p-spray implantation parameters. Different wafers were processed towards the fabrication of the radiation detectors with p-spray insulation and Al
₂
O
₃
. The evaluation of the prototype detectors has been carried out by performing the electrical characterization of the devices through the measurement of current-voltage and capacitance-voltage characteristics, as well as the measurement of detection response under radiation. The results of electrical measurements indicate that detectors fabricated with Al
₂
O
₃
exhibit a dark current several times lower than p-spray detectors and show an excellent electrical insulation between strips with a higher inter-strip resistance. Response of Al
₂
O
₃
strip detector under radiation has been found better. The resulting improved output signal dynamic range finally makes the use of Al
₂
O
₃
more attractive.