Latest advances in MMW oscillators

The author discusses some new device geometries expected to extend the useful fundamental operating frequency range of GaAs two terminal transferred electron devices (TEDs) or Gunn elements beyond 100 GHz. Similar structures are studied for multi-layered GaAs MMW IMPATT devices. Local oscillator millimeter wave (MMW) systems are predominately IMPATT (high power) and Gunn (low noise) sources. These components have been realized in both waveguide and integrated circuit configurations throughout the most widely used portion (26.5-110 GHz) of the MMW region.<
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