A tunable micro-ring notch filter

This paper demonstrates electro-optic tuning of a laterally-coupled GaInAsP-InP micro-ring resonators. The device is a p-i-n diode, with the intrinsic region of forming the waveguide core. The intrinsic region is composed of a superlattice of quantum wells. By applying a reverse bias, the resonance wavelength is tuned by 0.8 nm (100 GHz) over 8 V using the quadratic electro-optic effect. The quadratic electro-optic coefficient is estimated to be 4.9 /spl times/ 10/sup -15/ cm/sup 2//V/sup 2/. Independent measurements of the electro-optic characteristics of the wafer is also presented.