A new analytical thermal model for multilevel ULSI interconnects incorporating via effect

This paper presents a compact analytical model for estimating the temperature rise of multilevel ULSI interconnects incorporating the via effect. For the first time, an analytical expression is derived for the via correction factor, /spl eta/, which quantifies the effect of via separation on the effective thermal conductivity of ILD (inter-layer dielectrics), k/sub ILD,effective/, with k/sub ILD,effective/=k/sub ILD//k/sub ILD,effective/, where 0