Stochastic Modeling of FinFET Degradation Based on a Resistor Network Embedded Metropolis Monte Carlo Method

This paper presents a comprehensive stochastic simulation approach combining resistor network embedded metropolis Monte Carlo method and the finite-element method for modeling FinFET oxide degradation. The geometrical impact of the 3-D structure is linked with the stochastic model, and the simulation method can evaluate the degradation behavior of FinFET structures accounting for geometrical variations and multiphysics coupling effects. The leakage current, electric field, current density, and temperature distribution are simulated and show good agreement with electrical stress test data. The simulation results also indicate the need for a bimodal clustering model to best describe FinFET degradation and dielectric breakdown lifetime statistics. The proposed simulation methodology is generic enough to be fine-tuned for reliability modeling of other logic and nonvolatile memory devices in the future.