Effect of quasi-fermi level on computing quantum efficiency in p-n junction solar cell

Quantum efficiency of p-n junction solar cell is analytically calculated with incorporation of the effect of Quasi-Fermi level generated after showering of photon. Result is derived after simultaneous solution of carrier transport equations involving both drift and diffusion mechanism, and carrier continuity equations involving generation rate. It is observed that slightly higher efficiency is obtained as compared to the existing results where the excess carrier generation rate is not taken into account. Effects of doping concentrations in either side of the junction, reflectivity and depletion width are analyzed, which are useful for practical design.