Optimize parameters of new fabricated n-CdTe/p-CdTe solar cell

In this investigation, a new fabricated thin film solar cell with FTO/n-CdS/n-CdTe/p-CdTe/Au structure is modeled. The modeled device is compared with experimental data. Bring in n-CdTe at front of the absorber separate main electric field (buried junction) from heterojunction. Parameters of this new structure is optimized by physical analyses to achieve highest efficiency. The investigated properties in this structure are included: position of n-CdTe/p-CdTe buried junction, doping density of n-CdTe and p-CdTe layers. The efficiency of n-CdTe/p-CdTe cell improves from 15.3% to 19.7%, by optimization of buried junction position and doping density of absorber layers.