Dual-Gate Phototransistor With Perovskite Quantum Dots-PMMA Photosensing Nanocomposite Insulator

Dual-gate InGaZnO thin-film-transistors were fabricated to demonstrate their feasibility as phototransistors by fully exploiting the perovskite quantum dots (QDs) with superior quantum yield. Here, we show that by coupling the top-gate photo sensing polymethyl methacrylate (PMMA)/CsPbBr₃ QDs hybrid insulator with the classic SiO₂ bottom-gate insulator, the phototransistor can exhibit a combination of excellent detective performance (3.75 × 10¹² Jones detectivity and 1 × 10³A/W responsivity) and electrical performance (small 3-V threshold voltage, 0.53-V/decade substhreshold slop, and 0.1-V hysteretic threshold voltage's shift). Additionally, this dual-gate phototransistor exhibits high stability and accelerated detecting speed (<;100 μs) due to the inorganic perovskite QDs/PMMA hybrid gate insulator. Our results suggest that in a proper device architecture, perovskite nanomaterials can be promising candidates for cost-effective, high-performance phototransistor.