Input capacitance determination of power MOSFETs from switching trajectories

A novel method for determining input capacitance of power MOSFETs is proposed. Through measurements of gate charge transfer trajectories during switching, gate-source capacitance and drain-gate capacitance are determined. The capacitance models obtained by the proposed method simulate switching waveforms accurately and reduce timing errors by more than 16 times when compared to the conventional model characterized through the small-signal measurements.