A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector

For the first time, a comprehensive study of Vanadium oxide-based selector characteristics with a universal model observed by thermal and electrical induced threshold switching (TS) phenomena at interface is presented in this work. The model can explain that the resistance evolution by thermal temperature in TS behaviors, as well as the resistance gradually increases with cycling (“seasoning effect”). Compatible current density (10
⁷
~10
⁹
A/cm
²
) and selectivity (~100) with physical understanding of evolution in energy barrier and MIT metallic state modulation are studied. The results show a promising design guideline for future storage-class memory (SCM) applications.