Time dependent dielectric breakdown of SiN, SiBCN and SiOCN spacer dielectrics

The dielectric breakdown of SiN, SiBCN, and SiOCN MOSFET spacer dielectrics are studied. Using the Self-Consistent-Acceleration-Poisson-Statistics (SCAPS) method, SiN follows a 1/E dependent breakdown model while SiBCN and SiOCN show behavior consistent with the power-law model. The likelihood of the SCAPS method correctly identifying the best acceleration model is quantified through Monte-Carlo simulations. Trends in Weibull slope, power-law voltage acceleration exponent, activation energy, and defect generation rate is compared and contrasted to the well-studied SiO
₂
gate dielectric.