Reliability of black phosphorus field-effect transistors with respect to bias-temperature and hot-carrier stress

We perform a detailed study of bias-temperature instabilities and hot-carrier degradation in highly-stable black phosphorus field-effect transistors and attempt to capture the correlation between these phenomena. We demonstrate that a hot-carrier stress applied in conjunction with a bias stress leads neither to a considerably stronger degradation nor to dramatically different recovery dynamics, which is in contrast to graphene devices and Si technologies. This allows us to conclude that the BP/SiO
2
system is a significant step forward in terms of the reliability improvement of next-generation 2D devices.