Dip-Shaped AlGaN/AlN Light-Emitting Diodes With Delta-Layer Containing Boron

Effects of a BAlGaN delta-layer on light emission characteristics of ultraviolet AlGaN/AlN quantum-well (QW) structures in light-emitting diodes were investigated using the multiband effective-mass theory. The reduction in the spatial separation between electron and hole wavefunctions is found to be significant with the inclusion of the BAlGaN delta-layer. The light emission intensity rapidly increases with increasing B content x
_d
in the delta-layer. The peak intensity of the QW structure with the boron content of 0.06 appears to be two and half times larger than that of the QW structure with the conventional AlGaN delta-layer. On the other hand, the transition wavelength is nearly not affected by the inclusion of the BAlGaN delta layer.