Detection of crystallographic defects in 3C-SiC by micro-Raman and micro-PL analysis

A new technique with micro-Raman and micro-PL analysis is proposed to detect defects in 3C-SiC epitaxial films. The high-power of an above band-gap laser is used to increase locally the free carriers density in un-doped epitaxial material (n <; 10
¹⁶
cm
^-3
). The electronic plasma couples with the longitudinal optical (LO) Raman mode determining the so-called LOPC effect. The Raman shift of the LO phonon-plasmon-coupled mode (LOPC) changes as the free carriers density is modified. Crystallographic defects induce a modification of the free carriers density determining a change in the Raman shift of LO mode and in the PL emission from the 3C-SiC gap. Thus we suppose that the results observed are connected to crystallographic defects and we propose this technique as a methodology to analyze extended defects in 3C-SiC material because a detailed study of defects in 3C-SiC has not yet been performed.