1/f Noise analysis of Hafnium Oxide based ReRAM devices using ac + dc measurement technique

1/f noise levels in hafnium oxide-based bipolar ReRAM devices are studied using an AC+DC measurement technique. Preliminary results support the idea that the current conducts through a low resistive metal rich filament at low resistance state (LRS) and the current at high resistance state (HRS) is a trap-assisted current. The technique used here, allows to estimate the noise levels around 1 Hz.