Evaluation of threshold current density of electromigration damage considering passivation thickness

Many types of micro-nanoscaled integrated circuits are designed and used in electronics fields. However they are often used without ensuring high reliability. Electromigration which is an atomic transportation phenomena due to high electric current density applied in metal lines is a critical problem in integrated circuits reliability. The passivated metal line has a threshold current density of electromigration damage. In this study, we investigate the threshold current density in straight-shaped metal polycrystalline lines by means of numerical simulation technique. Also a new prediction method is proposed for determining the threshold current density of electromigration.