Numerical Study of Transient Oscillation in Gain-Switched InGaN-Based Laser Diodes

The pulse working of gain-switched laser diodes (LDs) provides more power than continuous-wave (CW) emission. Similar to the CW emission, the pulse emission affects by the structural properties and different loss mechanisms of the active region. In this paper, both of these parameters are investigated in InGaN-based LDs, numerically. It is found that the thickness of the InGaN quantum well (QW) have an influence on the transient pulse, and at high enough injection currents, the thinner QW with a higher loss in CW mode can produce a stronger transient peak emission. The study of loss mechanisms in these structures indicates that the cause of the strong emission in thinner QW is mainly from the higher carrier concentration inside the active layer, which decreases significantly by Auger recombination and carrier leakage. The results of this paper can help to have a better understanding about pulse emission power from InGaN-based LDs.