High responsivity double-junction CMOS-compatible avalanche photodiode

Double-junction, separate-absorption and multiplication (SAM) CMOS-compatible avalanche photodiode (APD) is proposed and modeled. The two gains are controlled independently. The zero-bias responsivities were calculated to be 0.25 A/W at 450 nm and 0.38 A/W at 635 nm, respectively, with a constant illumination of 10 mW/cm
²
.