Towards barrier free contacts to n-type CNTFETs using graphene electrodes

This work illustrates the performance of n-type carbon nanotube field effect transistors (CNTFET) contacted with few layer graphene. The true barrier height at graphene-CNT junction is estimated using temperature dependent I-V measurements. Thermionic emission model for carrier transport in CNTs is used in the study. The calculated barrier height values for electron transport are extremely small and slightly negative signifying the Ohmic contact of graphene with the conduction band of CNTs.