Strain balancing of MOVPE InAs/GaAs quantum dots using GaAs0.8P0.2

MOVPE growth of stacked InAs/GaAs QDs with and without GaAs
_0.8
P
_0.2
strain balancing layers has been studied. The GaAsP layers reduce the accumulated strain whilst maintaining the electrical characteristics. This should enable closer stacking of QD layers leading to higher gain and improved laser performance.