Simulation of probe misalignment effects during RF on-wafer probing

The RF probing is a common task in the semiconductor industry for electrical parameters. In this paper an FEM simulation will be presented to evaluate the influences of probe misalignment on the measurement results during RF on-wafer probing. The main aspect is the investigation of the effects of distorted RF measurements through imprecise positioned tips. The virtual setup includes a GSG probe for on-wafer measurements and different electrical calibration structures. The simulation reveals a significant influence of the alignment on the results and shows an unbalance in the resulting electric field.