Rapid thermal annealing for carbon nanotube thin film transistors by a double-themral-region furnace

Determination of the annealing condition has always been critical and challenging for performance improvement of the carbon-based devices. In this paper, rapid thermal annealing (RTA) in hydrogen followed by rapid cooling down with a double-thermal-region movable furnace for carbon nanotube thin film transistors (CNT-TFTs) has been proved to be an effective method to improve device performance. After the post-treatment by RTA and rapid cooling down, off current of CNT-TFTs was reduced by 10-100 times, on/off current ratio was increased by almost 10 times, and mobility was increased by about 66%. It turns out that RTA treatment under 700 °C for 60 seconds resulted in the most significant improvement for CNT-TFT performance.