A broad-band 55-nm BiCMOS T/R switch for mmW 5G small cell access point

This paper shows a passive broad-band SPDT T/R switch in 55-nm BiCMOS technology which covers most of the millimetre-wave bands considered for 5G (from 28 to 86 GHz). It is intended to be integrated into active phased array antenna modules for a 5G small cell access link. The realized switch presents minimum insertion loss of 2.6 dB. The switch isolation is better than 26 dB. Its very wide bandwidth (14–94 GHz) allows it to be used in K, Q, V and E bands. The area occupied by the chip is around 0.3 mm
²
.