Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application

We demonstrate a technique for selective GeO
_x
-scavenging which creates a GeO
_x
-free IL on Si
_1-x
Ge
_x
substrates. This process reduces N
_it
by >60% to 2e11 and increases high-field mobility at N
_inv
=1e13 cm
^-2
by ~1.3× in Si
_0.6
Ge
_0.4
pFETs with sub-nm EOT.