Performance assessment of Indium Arsenide (InAs) Single and Dual quantum-well heterostructure FinFETs

In this work, we have analyzed the performance of Indium Arsenide (InAs) based heterostructure MOSFET using TCAD device simulation. A detailed investigation of the impact of Single and Dual quantum-well is investigated and compared with performance of In
_0.7
Ga
_0.3
As based FinFET. The results indicates that a quantum well structure provides improved analog and rf performance; with a Dual-quantum well structure exhibiting the better performance than Single quantum well structure.