Doping-less double gate impact ionization MOSFET for high switching application

In this paper novel doping-less double gate impact ionization MOSFET (DLDGIMOS) on a p-type silicon film has been presented. DLDGIMOS inherits the advantage of simple fabrication process due to the doping-less nature and also very sharp sub-threshold slope (below the 60 mV/decade at room temperature) because of impact ionization. The proposed device has no metallurgical junctions and also no impurity doping is required to form the source and the drain junctions. Extensive simulations using SILVACO ATLAS
^TM
have been performed to investigate the DLDGIMOS. Simulations show that the proposed structure which can be implemented using low thermal budgeting, is efficacious in case of high switching applications.