Growth and characterization of (Zn, Sn, Ga)As2 thin films grown on GaAs(001) substrate by molecular beam epitaxy

We fabricated (Zn, Sn, Ga)As
₂
thin films grown on semi-insulating GaAs(001) substrate by molecular beam epitaxy and characterized their structural, compositional and electrical properties in terms of conduction-type control. The X-ray diffraction peaks of (Zn, Sn, Ga)As
₂
films which shift toward lower angle compared with that of (Zn, Sn)As
₂
film indicate that Ga incorporating in (Zn, Sn)As
₂
decrease their lattice constants. Compositional analysis by electron-probe micro analyzer (EPMA) indicated that the composition ratios of Zn to all the cation sites are smaller than that of Sn. Hall effect measurements of these (Zn, Sn, Ga)As
₂
thin films showed n-type conductivity. These results suggest that Ga atoms are substituted for Zn atoms more than Sn atoms and change their conduction type from p-type to n-type.