60 V rating split gate trench MOSFETs having best-in-class specific resistance and figure-of-merit

A new 60 V rating split gate trench MOSFET fabricated with the state-of-the-art process technology has been investigated and evaluated in the secondary synchronous rectifier board. It shows the best-in-class specific resistance of 10.9 mΩ·mm
²
and the figure-of-merit (FOM) of 85 mΩ·nC which is the product of the on-resistance and the gate charge.