3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature

Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (
$\sim 3\times 10^{\mathrm {{-5}}} \Omega ~\cdot $
cm
$^{2})$
ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with as-deposited ohmic contacts were fabricated, and it turned out not only the ohmic contact is free from any interface voids, but also a higher field-effect mobility value (
$\sim 80$
cm
$^{\mathrm {{2}}}$
/V
$\cdot $
s) was achieved compared with the annealed devices.