Performance evaluation of FinFET and Nanowire at different technology nodes

The miniaturization of device dimensions has been used to improve the performance of bulk MOSFETSs. The scaling of MOSFET dimensions has led to increased speed, high driving capability, ICs with increased functionality and reduced cost. Further scaling of Devices in the nanometer range has become extremely difficult. FinFET and Nanowire transistors promise to replace traditional MOSFETs because of their superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive current. Here we show detailed performance analysis of MOSFET, FINFET and NANOWIRE devices in terms of parameters like Transconductance, threshold voltage, leakage and Ion/Ioff have been thoroughly carried out with MUGFET simulation tool. The simulation results have revealed that the short channel effects have been minimized and Ion /Ioff ratio and transconductance have been improved with device scaling at different technology nodes.