ReRAM-based analog synapse and IMT neuron device for neuromorphic system

We report nanoscale oxide based analog synpase device and Insulator-Metal-Transition (IMT) oscillator neuron device for neuromorphic system [1,2]. By controlling the redox reaction at Metal/Pr
_0.7
Ca
_0.3
MnO
₃
(PCMO) interface, we can control synapse characteristics such as switching uniformity, disturbance, retention and multi-level data storage under identical pulse condition. Among various metal electrodes, we found that Mo electrode shows the best data retention characteristics. Using IMT characteristics of NbO2 film, we developed IMT oscillator for neuron application. We have experimentally confirmed the realization of pattern recognition with high accuracy using the Mo/PCMO synapse array and NbO
₂
oscillator neuron.