A method for combined characterization of MOSFET threshold voltage and junction capacitance eliminating channel current effect

A method for an extraction of a MOSFET threshold voltage has been proposed. It is based on an analysis of the MOSFET source-bulk junction capacitance behavior along the gate-source voltage variation. A channel current effect on the threshold voltage extraction is fully eliminated. In parallel the junction capacitance and its planar and sidewall components are determined. A non-iterative method for extraction of the junction capacitance has been proposed. The proposed method operation has been demonstrated using series of MOS transistors.