MCSSim: A memory channel storage simulator

Recently, NVDIMM (Non-Volatile Dual In-line Memory Module) is being widely supported by leading hardware design companies, such as IBM. Nevertheless, existing efforts largely focus on NVDIMM specification and fabrication issues, and the potential performance gains brought by NVDIMM are not fully investigated. In this paper, we present a NVDIMM-based simulator called MCSSim to help study the memory channel storage techniques. MCSSim is a cycle-accurate simulator that is elaborated with the consideration of differences between the memory channel interface and the NAND flash memory features. MCSSim is also implemented with the DRAMSim2 [31] simulator thus enabling the simulation of a variety of hybrid memory systems by combining of DRAM DIMM and NVDIMM. We have done some experiments with MCSSim, and the experimental results show the effectiveness of the proposed simulator.