The effect of interfacial oxide and high-κ thickness on NMOS Vth shift from plasma-induced damage

Different thicknesses of interfacial oxide and high-κ were used to study the effects of plasma-induced damage (PID) in NMOS transistors. The thickness of high-κ HfO
₂
was varied from 15Å to 25Å. The thickness of the interfacial layer (IL) with N
₂
O/H
₂
was also varied from 5Å to 10Å. The threshold voltage (V
_th
) shift was observed to be greater in the thinner oxide using the same plasma condition. There was no significant effect with different IL thickness between 5Å and 10Å.