Thermal performance assessment in AlGaN/GaN structures by microsensor integration

The high power density in AlGaN/GaN High Electron Mobility Transistors (HEMTs) can notably produce strong self-heating in the device. This effect leads to performance degradation and reliability concerns. Thermal performance of the device is strongly dependent on the epitaxial structure and substrate material. This work puts into perspective the thermal performance of three devices with same dimensions, fabricated on different AlGaN/GaN structures. The evaluation is carried out by the integration of a temperature micro sensor located above the active region.