Advanced high accuracy scanning electron microscopy review methodology by virtual defect — Yiting Kuo

The exact location of defect is very important for review SEM. It is necessary to provide high accuracy defect review with line width shrinkage in manufacture of semiconductor. In this paper, we proposed a new methodology of defect deskew by virtual defects (VD) which provide high accuracy defect review. Furthermore, we also compare the result of different inspection modes and different pixel sizes.