Failure and switching mechanisms in semiconductor P-N junction devices

We use theoretical results obtained with computer models to interpret existing experimental data related to second breakdown mechanisms. We show that if you solve the complete set of transport equations for electrons, holes, and heat, you can model three kinds of second breakdown phenomena: current mode (CSB), thermal mode (TSB), and current­ thermal (CSB-TSB) mode second breakdown. We also discuss the effect of the input voltage pulse shape on the current switching time of a p-n junction device.