Tri-gate In0.53Ga0.47As-on-insulator junctionless field effect transistors

A tri-gate In
_0.53
Ga
_0.47
As-on-insulator (InGaAs-OI) junctionless field-effect transistor (JLFET) architecture is demonstrated. The devices feature a 20-nm-thick n-In
_0.53
Ga
_0.47
As channel doped to 10
¹⁸
/cm
³
obtained by direct wafer bonding and a 3.5-nm-thick Al
₂
O
₃
gate dielectric deposited by plasma-enhanced atomic layer deposition (PE-ALD). The impact of the fin width (W
_fin
) and gate length (L
_g
) scaling at fixed channel doping (N
_d
) and equivalent oxide thickness (EOT) on the device performance is discussed and benchmarked.