Realization of GaN-based high frequency planar schottky barrier diodes through air-bridge technology

GaN-based planar schottky barrier diodes with potential applications in high frequency multipliers were designed, fabricated and characterized. The parasitic parameters of diodes were reduced by the air-birdge technology and ultrathin substrate. The total capacitance of diodes was only 12.5fF, and the series resistance is 16Ω. The Diodes with a thickness of 50μm and an anode diameter of 5μm had a hard breakdown voltage of 22.8V, the turn-on voltage of 0.45V@10μA and a cut-off frequency (f
_c
) of 796GHz.