A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz f
_T
and 360 GHz f
_MAX
high performance SiGe HBTs, 135 GHz f
_T
and 2.5V BV
_CEO
medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and a library of digital functions aids logic and memory design. The technology supports mm-wave and high-performance RF/Analog applications.