P+ layer effects on a-Si:H solar cell performance

Influences of the p
⁺
layer, i.e., deposition condition, post-deposition annealing, thin film deposition sequence, internal light reflection, electrode film quality, and SiN
_X
chamber pretreatment on the a-Si:H solar cell performance have been studied. The conversion efficiency is improved using the pin stack structure with a high final annealing temperature and a high reflective bottom electrode due to the decrease of the contact resistance, the reduction of defects in the film, the increase of the hole transport efficiency, the improvement of light absorption, and the minimum cross contamination. The high solar cell efficiency was obtained by optimizing the p
⁺
related film process.