High quality Ge epitaxial films grown on In0.51Ga0.49P/GaAs and GaAs substrates by ultra high vacuum chemical deposition

The epitaxial growth of high quality Ge thin films on different materials of In
_0.51
Ga
_0.49
P and GaAs by ultra high vacuum chemical vapor deposition (UHVCVD) system was studied. The crystallinity of high quality Ge layers on In
_0.51
Ga
_0.49
P and GaAs layers can be proved by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The comparison of surface morphology between Ge grown on In
_0.51
Ga
_0.49
P and GaAs was also analyzed by atomic force microscopy (AFM). The roughness of Ge on GaAs shows better than that of In
_0.51
Ga
_0.49
P. Both of these structures were designed for fabricating p-channel metal-oxide-semiconductor field-effect transistor (MOSFET) for the integration of Ge p-channel device with III-V n-channel electronic device.