Current relaxation in PbSnTe:In in a strong magnetic field

Current change dynamics in the injection regime out of contacts and limitations by spatial charge at a fast (about 0.1 sec.) magnetic field turn on and off, strength to 4 T, were investigated in PbSnTe:In film-based structures at T=4.2 K. Peculiarities of current relaxation are discussed within the model that implies the presence of traps levels, distributed over energy, in the PbSnTe:In band gap.