Nanometer InP electron devices for VLSI and THz applications

While the growth of III-As and III-P semiconductors is well-established, and their transport properties well-understood, the performance of high-frequency and VLSI electron devices can still be substantially improved. Here we review design principles, experimental efforts, and intermediate results, in the development of nm and THz electron devices, including nm InAs/InGaAs planar MOSFETs and finFETs for VLSI, InGaAs/InP DHBTs for 0.1–1 THz wireless communications and imaging, and ∼5nm InAs/InGaAs Schottky diodes for mid-IR mixing.