Interface properties of n-GaN MIS diodes with ZrO2/Al2O3 laminated films as a gate insulator

Interface properties have been investigated for n-GaN MIS diodes. ZrO
₂
/Al
₂
O
₃
laminated films were used as a gate insulator with varying the deposition sequence of each layer. It was found that the interface state density was decreased with increasing the fraction of Al
₂
O
₃
, and the energy level of the interface state became shallow with increasing the annealing temperature.