A numerical study of UTC-PD structures with berylium as the p-dopant

We numerically investigate UTC PD structures that use highly diffusible beryllium (Be) as the p-type impurity in absorption layer An intrinsic InGaAs layer is added between the absorption layer and collection layer as a diffusion buffer. The influence of this buffer layer is analyzed, and the results obtain shows that high responsivity and high speed can be achieved.