In the beginning [junction transistor]

The junction transistor, technologically the most important solid-state device, invented theoretically by W.B. Shockley on January 23, 1948, brought about the semiconductor revolution. That invention was triggered by the experimental discovery of the point-contact transistor by W. Brattain and J. Bardeen 38 days earlier. Bardeen's notebook entries at Bell Telephone Laboratories for the crucial 100-day period November 21, 1947-February 29, 1948 have been examined to ascertain why this winner of two Nobel Prizes in physics could not invent the junction transistor. It was found that the boundary between the thin p-type inversion layer and the n-type bulk germanium semiconductor in their original point-contact transistor discovery was characterized as a "high resistance boundary" in macroscopic electrical engineering terms by Bardeen, the electrical engineer turned mathematical physicist. Pages from Shockley's notebook are reproduced in full to show what exactly he was thinking on December 16, 1947, the day the point-contact transistor was experimentally discovered by Brattain and Bardeen. The origin of U.S. Patent 2524035 has been traced to the Bell Telephone Laboratories notebook pages of its inventors and examined. It is shown that this patent could not be considered as the first patent describing Shockley's revolutionary theoretical invention of the minority carrier injection concept underlying bipolar transistor action.